U1H1L5N2D
|
Dual-Half Bridge and Dual-NMOS IPM內(nèi)置高壓半橋驅(qū)動和2路NMOS的IPM模塊
|
HIN+, LIN+高側(cè)高有效,低側(cè)高有效
|
500V |
5A |
1500 |
4.8/4.6 |
4.8/4.6 |
ESOP13 |
| U1H1L4N2D |
Dual-Half Bridge and Dual-NMOS IPM內(nèi)置高壓半橋驅(qū)動和2路NMOS的IPM模塊 |
HIN+, LIN+高側(cè)高有效,低側(cè)高有效 |
500V |
4A |
1800 |
4.8/4.6 |
4.8/4.6 |
ESOP13 |
| U1H1L3N2D |
Dual-Half Bridge and Dual-NMOS IPM內(nèi)置高壓半橋驅(qū)動和2路NMOS的IPM模塊
|
HIN+, LIN+高側(cè)高有效,低側(cè)高有效
|
500V |
3A |
2000 |
4.8/4.6 |
4.8/4.6 |
DFN5*6-10L/ESOP13 |
| U1H1L7N2D |
Dual-Half Bridge and Dual-NMOS IPM內(nèi)置高壓半橋驅(qū)動和2路NMOS的IPM模塊 |
HIN+, LIN+高側(cè)高有效,低側(cè)高有效 |
300V |
7A |
1000 |
4.8/4.6 |
4.8/4.6 |
ESOP13 |